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Theoretical and Experimental Analysis of a CSWPL Behavioral Model for Microwave GaN Transistors Including DC Bias Voltages
Tang, X.; Raffo, A.; Donato, N.; Crupi, G.; Cai, J.
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Contributo in rivista (Pubblicazione in Rivista) |
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
Vol. 43, No. 3, pp: 933-943, Anno: 2024 |
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Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22and h21: An Effective Machine Learning Approach
Zhu, Z.; Bosi, G.; Raffo, A.; Crupi, G.; Cai, J.
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Contributo in rivista (Pubblicazione in Rivista) |
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Vol. 12, No. 1, pp: 201-210, Anno: 2024 |
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A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function
Gugliandolo, G; Crupi, G; Vadala, V; Raffo, A; Donato, N; Vannini, G
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Contributo in rivista (Pubblicazione in Rivista) |
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS
Vol. 33, No. 7, pp: 1007-1010, Anno: 2023 |
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Active Balun Design for Next-Generation Telecom Satellite Frequency Converters
Resca, D.; Bosi, G.; Biondi, A.; Cariani, L.; Vadala, V.; Scappaviva, F.; Raffo, A.; Vannini, G.
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Contributo in rivista (Pubblicazione in Rivista) |
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Vol. 33, No. 2, pp: 165-168, Anno: 2023 |
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A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper)
Crupi, G.; Latino, M.; Gugliandolo, G.; Marinkovic, Z.; Cai, J.; Bosi, G.; Raffo, A.; Fazio, E.; Donato, N.
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Contributo in rivista (Pubblicazione in Rivista) |
ELECTRONICS
Vol. 12, No. 8, pp: 1771-1-1771-15, Anno: 2023 |
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Harmonic Included CSWPL Model for Broadband PA Design Based on GaN HEMTs
Tang, X.; Raffo, A.; Crupi, G.; Cai, J.
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Contributo in rivista (Pubblicazione in Rivista) |
IEEE TRANSACTIONS ON ELECTRON DEVICES
Vol. --, No. 1, pp: 1-9, Anno: 2023 |
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A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation
Bosi, G.; Raffo, A.; Vadala, V.; Giofre, R.; Crupi, G.; Vannini, G.
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Contributo in rivista (Pubblicazione in Rivista) |
ELECTRONICS
Vol. 12, No. 13, pp: 2939-2956, Anno: 2023 |
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How Large-Signal Measurement Techniques Improve the Accuracy of Microwave Transistor Nonlinear Models
Raffo, A.
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Atto di Convegno (Proceedings) |
Institute of Electrical and Electronics Engineers Inc.,
Asia-Pacific Microwave Conference Proceedings, APMC
Vol. 2022-, No. 1, pp: 178-180, Anno: 2022 |
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Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers
Yamamoto, H.; Kikuchi, K.; Vadala, V.; Bosi, G.; Raffo, A.; Vannini, G.
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Contributo in rivista (Pubblicazione in Rivista) |
IEICE TRANSACTIONS ON ELECTRONICS
Vol. E105C, No. 10, pp: 449-456, Anno: 2022 |
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Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures
Nanni, J.; Saderi, G.; Bellanca, G.; Bosi, G.; Raffo, A.; Vadala, V.; Debernardi, P.; Polleux, J. -L.; Tartarini, G.
dettagli >>
Atto di Convegno (Proceedings) |
Institute of Electrical and Electronics Engineers Inc.,
2022 Italian Conference on Optics and Photonics, ICOP 2022
pp: 1-4, Anno: 2022 |
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Equivalent-circuit extraction for gallium nitride electron devices: Direct versus optimization-empowered approaches
Jarndal, A.; Crupi, G.; Alim, M. A.; Vadala, V.; Raffo, A.; Vannini, G.
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Contributo in rivista (Pubblicazione in Rivista) |
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
Vol. 35, No. 5, pp: e3008-1-e3008-11, Anno: 2022 |
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200-W GaN PA Design Based on Accurate Multicell Transistor Modeling
Vadala, V.; Raffo, A.; Bosi, G.; Barsegyan, A.; Custer, J.; Formicone, G.; Walker, J.; Vannini, G.
dettagli >>
Atto di Convegno (Proceedings) |
Institute of Electrical and Electronics Engineers Inc.,
IEEE MTT-S International Microwave Symposium Digest
Vol. 2022-, No. 1, pp: 378-381, Anno: 2022 |
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mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis
Vadala, V.; Crupi, G.; Giofre, R.; Bosi, G.; Raffo, A.; Vannini, G.
dettagli >>
Atto di Convegno (Proceedings) |
IEEE Computer Society,
Mediterranean Microwave Symposium
Vol. 2022-, No. 1, pp: 420-425, Anno: 2022 |
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Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection
Scappaviva, F.; Bosi, G.; Biondi, A.; D'Angelo, S.; Cariani, L.; Vadala, V.; Raffo, A.; Resca, D.; Cipriani, E.; Vannini, G.
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Contributo in rivista (Pubblicazione in Rivista) |
ELECTRONICS
Vol. 11, No. 19, pp: 2998-3007, Anno: 2022 |
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150-nm GaN HEMT Degradation under Realistic Load-Line Operation
Raffo, A.; Vadala, V.; Bosi, G.; Giofre, R.; Vannini, G.
dettagli >>
Atto di Convegno (Proceedings) |
Institute of Electrical and Electronics Engineers Inc.,
2022 17th European Microwave Integrated Circuits Conference, EuMIC 2022
pp: 141-144, Anno: 2022 |
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A GaN-SiC MMIC Doherty Power Amplifier For K-band Wireless Communications
Furxhi, S.; Marzi, S. D.; Raffo, A.; Giofre, R.; Colantonio, P.
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Atto di Convegno (Proceedings) |
Institute of Electrical and Electronics Engineers Inc.,
2022 24th International Microwave and Radar Conference, MIKON 2022
pp: 1-3, Anno: 2022 |
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Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements
Bosi, G.; Vadala', V.; Giofre, R.; Raffo, A.; Vannini, G.
dettagli >>
Atto di Convegno (Proceedings) |
Institute of Electrical and Electronics Engineers Inc.,
2021 34th General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2021
pp: 01-03, Anno: 2021 |
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Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling
Vadala, V.; Raffo, A.; Colzani, A.; Fumagalli, M. A.; Sivverini, G.; Bosi, G.; Vannini, G.
dettagli >>
Atto di Convegno (Proceedings) |
Institute of Electrical and Electronics Engineers Inc.,
EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
pp: 161-164, Anno: 2021 |
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An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation
Jarndal, A.; Crupi, G.; Raffo, A.; Vadala', V.; Vannini, G.
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Contributo in rivista (Pubblicazione in Rivista) |
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Vol. 9, No. 1, pp: 378-386, Anno: 2021 |
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2-mm-gate-periphery GaN high electron mobility transistors on SiC and Si substrates: A comparative analysis from a small-signal standpoint
Jarndal, A.; Alim, M. A.; Raffo, A.; Crupi, G.
dettagli >>
Contributo in rivista (Pubblicazione in Rivista) |
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING
Vol. 31, No. 6, pp: e22642-1-e22642-12, Anno: 2021 |
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